研究テーマB
“Electrical properties of organic-inorganic hybrid tin bromide cubic perovskites: hole-doping and iodide substitution effects”
H. Hasegawa and T. Inabe
New J. Chem., 40, 7043-7047 (2016), DOI: 10.1039/c6nj00439c
, DOI: 10.1039/C0DT01601B
“Hall mobility in tin iodide perovskite CH3NH3SnI3: Evidence for a doped semiconductor”
Y. Takahashi, H. Hasegawa, Y. Takahashi and T. Inabe
J. Solid State Chem., 205, 39-43 (2013), DOI: 10.1016/j.jssc.2013.07.008
“Hole Doping of Tin Bromide and Lead Bromide Organic–Inorganic Hybrid Semiconductors”
G. S. Lorena, H. Hasegawa, Y. Takahashi, J. Harada and T. Inabe
Chem. Lett., 43, 1535-1537 (2014), DOI: 10.1246/cl.140536
